*
*
*
*
*
* -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche t.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQB10N20

FQB10N20C

FQB10N20L

FQB10N50CF

FQB10N60C

FQB11N40

FQB11N40C

FQB11P06

FQB12N20

FQB12N20L

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